KGT25N120NDA, покупаем в интернете - получаем у себя дома.

IGBT, DC=50A, Vce(on)=4.0V, Pd=310W, V(br)ceo=1200V, корпус-TO-3P(N)-E-3, tmax-150°C

KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES

High speed switching High system efficiency Short Circuit Withstand Times 10us Extremely enhanced avalanche capability

CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range @Tc=100 Tj Tstg @Tc=25 @Tc=100 ICM* IF IFM PD SYMBOL VCES VGES IC RATING + 150 UNIT

*Repetitive rating : Pulse width limited by max. junction temperature

CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient

CHARACTERISTIC Static Collector-Emitter Breakdown Voltage Collector Cut-off Current Gate Leakage Current Gate Threshold Voltage BVCES ICES IGES VGE(th) VCE=1200V VCE=0V, VGE= mA nA SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Dynamic Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Short Circuit Withstand Time Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Cies Coes Cres tsc VGE=15V, RG=10 Inductive Load, IC=25A, VGE=15V,RG=10 Inductive Load, VCC=600V, VGE=15V, IC= pF s

CHARACTERISTIC Diode Forward Voltage SYMBOL = 25A TEST CONDITION = 25A di/dt TC=25 TC=125 MIN. TYP. MAX. 4700 nC UNIT